transistor (npn) features low c ob ,c ob = 2.0 pf (typ). marking : bq, br, bs maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.4 v transition frequency f t v ce =12v,i c =-2ma,f=100mhz 1 6 0 mhz collector output capacitance c ob v cb =12v,i e =0,f=1mhz 2.0 3.5 pf classification of h fe rank q r s range 120 - 270 180 - 390 270 - 560 marking bq br bs sot-23 1. base 2. emitter 3. collector 2SC2412 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu 2SC2412
3 www.htsemi.com semiconductor jinyu 2SC2412
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